r07ds1227ej0100 rev.1.00 page 1 of 7 nov 18, 2014 data sheet np30n04quk 40 v ? 30 a ? dual n-channel power mos fet application: automotive description np30n04quk is a dual n-channel mos field effect transistor designed for high current switching applications. features ? super low on-state resistance ? r ds(on) = 8 m max. (v gs = 10 v, i d = 15 a) ? low c iss : c iss = 1600 pf typ. (v ds = 25 v) ? designed for automotive application and aec-q101 qualified ? small size package 8-pin hson dual outline source 1 body diode body diode gate 1 drain 1 source 2 gate 2 drain 2 8-pin hson dual equivalent circuit remark: strong electric field, when exposed to this device, can cause destructi on of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickly diss ipate it once, when it has occurred. ordering information part no. lead plating packing package np30n04quk-e1-ay * 1 pure sn (tin) tape 2500 p/reel taping (e1 type) 8-pin hson dual np30n04quk-e2-ay * 1 taping (e2 type) note: * 1. pb-free (this product does not cont ain pb in the external electrode) r07ds1227ej0100 rev.1.00 nov 18, 2014
np30n04quk r07ds1227ej0100 rev.1.00 page 2 of 7 nov 18, 2014 absolute maximum ratings (t a = 25c) item symbol ratings unit drain to source voltage (v gs = 0 v) v dss 40 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25 c) ? 4 i d(dc) 30 a drain current (pulse) ? 1, 4 i d(pulse) 120 a total power dissipation (t c = 25 c) ? 4 p t1 59 w total power dissipation (t a = 25 c) ? 2, 4 p t2 1.0 w channel temperature t ch 175 c storage temperature t stg ? 55 to + 175 c single avalanche current ? 3 i as 22 a single avalanche energy ? 3 e as 46 mj thermal resistance channel to case thermal resistance r th(ch-c) 2.54 c/w channel to ambient thermal resistance ? 2 r th(ch-a) 150 c/w notes: *1. t c = 25c, pw 10 s, duty cycle 1% * 2. mounted on glass epoxy substrate of 40 mm 40 mm 1.6 mmt with 4% copper area (35 m) *3. r g = 25 , v gs = 20 v 0 v * 4. one channel operation
np30n04quk r07ds1227ej0100 rev.1.00 page 3 of 7 nov 18, 2014 electrical characteristics (t a = 25c) item symbol min typ max unit test conditions zero gate voltage drain current i dss 1 a v ds = 40 v, v gs = 0 v gate leakage current i gss 100 na v gs = 20 v, v ds = 0 v gate to source threshold voltage v gs(th) 2 3 4 v v ds = v gs , i d = 250 a forward transfer admittance ? 1 | y fs | 13 26 s v ds = 5 v, i d = 15 a drain to source on-state resistance ? 1 r ds(on) 6.5 8 m v gs = 10 v, i d = 15 a input capacitance c iss 1600 2400 pf v ds = 25 v, v gs = 0 v, f = 1 mhz output capacitance c oss 220 330 pf reverse transfer capacitance c rss 90 160 pf turn-on delay time t d(on) 20 40 ns v dd = 20 v, i d = 15 a, v gs = 10 v, r g = 0 rise time t r 8 20 ns turn-off delay time t d(off) 47 94 ns fall time t f 6 15 ns total gate charge q g 27 41 nc v dd = 32 v, v gs = 10 v, i d = 30 a gate to source charge q gs 9 nc gate to drain charge q gd 6 nc body diode forward voltage ? 1 v f(s-d) 0.9 1.5 v i f = 30 a, v gs = 0 v reverse recovery time t rr 32 ns i f = 30 a, v gs = 0 v, di/dt = 100 a/ s reverse recovery charge q rr 35 nc note: * 1. pulsed test test circuit 3 gate charge v gs = 20 test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 ?
np30n04quk r07ds1227ej0100 rev.1.00 page 4 of 7 nov 18, 2014 typical characteristics (t a = 25c) derating factor of forward bias safe operating area 0 20 40 60 80 100 120 10 20 30 40 50 70 60 0 dt - percentage of rated power - % 0 25 50 75 100 125 150 175 t c - case temperature - c total power dissipation vs. case temperature 0 25 50 75 100 125 150 175 t c - case temperature - c p t - total power disslpation - w forward bias safe operating area 0.1 1 10 100 v ds - drain to source voltage - v i d - drain current - a 0.01 0.1 1 10 100 1000 100 1 m 10 m 100 m 1 10 100 1000 pw - pulse width - s transient thermal resistance vs. pulse width 0.01 0.1 1 10 100 1000 r th(t) - transient thermal resistance - c/w r th(ch-c) = 2.54c/w r th(ch-a) = 150c/w power dissipation limited secondary breakdown limited t c = 25c single pulse i d(dc) = 30 a i d(pulse) = 120 a r ds(on) limited (v gs =10 v) dc pw = 10 ms pw = 1 ms pw = 100 s one channel operation single pulse mounted on glass epoxy substrate of 40 mm 40 mm 1.6 mmt with 4% copper area (35 m)
np30n04quk r07ds1227ej0100 rev.1.00 page 5 of 7 nov 18, 2014 forward transfer characteristics 0.001 0.01 0.1 1 10 100 012 4 356 v gs - gate to source voltage - v i d - drain curent - a gate to source threshold voltage vs. channel temperature 0 1 2 4 3 ?100 ?50 0 50 100 150 200 t ch - channel temperature - c v gs(th) - gate to source threshold voltage - v forward transfer admittance vs. drain current 1 10 100 0.1 1 10 100 i d - drain current - a |y fs | - forward transfer admittance - s drain to source on-state resistance vs. drain current 0 4 16 12 8 14 10 2 6 0 4 16 12 8 14 10 2 6 0.1 1 10 100 1000 i d - drain current - a drain to source on-state resistance vs. gate to source voltage 0 5 10 15 20 v gs - gate to source voltage - v drain current vs. drain to source voltage 0 20 60 140 40 80 100 120 01 . 2 0.2 0.4 0.6 0.8 1.0 v ds - drain to source voltage - v i d - drain current - a v ds = 10 v pulsed v gs = 10 v pulsed v ds = 5 v pulsed t a = ?55c ?40c 25c 75c 125c 175c t a = ?55c ?40c 25c 75c 125c 175c i d = 6 a 15 a 30 a v ds = v gs i d = 250 a r ds(on) - drain to source on-state resistance - m r ds(on) - drain to source on-state resistance - m v gs = 10 v pulsed pulsed
np30n04quk r07ds1227ej0100 rev.1.00 page 6 of 7 nov 18, 2014 capacitance vs. drain to source voltage 10 100 1000 10000 0.01 0.1 1 10 100 v ds - drain to source voltage - v c iss , c oss , c rss - capacitance -pf reverse recovery time vs. drain current 1 10 100 0.1 1 10 100 i f - drain current - a t rr - reverse recovery time - ns switching characteristics 1 10 100 1000 0.1 1 10 100 i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns dynamic input/output characteristics 0 20 35 10 30 15 5 25 4 2 6 8 14 12 10 q g - gate charge - nc v ds - drain to source voltage - v 0 v gs - gate to source voltage - v source to drain diode forward voltage 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1.0 1.2 v f(s-d) - source to drain voltage - v i f - diode forward current - a drain to source on-state resistance vs. channel temperature ?100 ?50 0 50 100 150 200 t ch - channel temperature - c r ds(on) - drain to source on-state resistance - m 01 5 10 53 0 25 20 v dd = 20 v v gs = 10 v r g = 0 v gs = 10 v i d = 15 a pulsed pulsed di/dt = 100 a/s v gs = 0 v v gs = 0 v f = 1 mhz c iss c rss c oss v gs v ds i d = 30 a t r t f t d(on) t d(off) v gs = 10 v v gs = 0 v 0 4 16 12 8 14 10 2 6 v dd = 32 v 20 v 8 v
np30n04quk r07ds1227ej0100 rev.1.00 page 7 of 7 nov 18, 2014 package drawings (unit: mm) 8-pin hson dual (mass: 0.12 g typ.) renesas package code: plsn0008da-a 1: source 1 2: gate 1 7, 8: drain 1 3: source 2 4: gate 2 5, 6: drain 2 a a s
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history np30n04quk data sheet rev. date description page summary 1.00 nov 18, 2014 ? first edition issued
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